Work

Dielectric-Free Molybdenum Disulfide Transistors with In-Plane Gates

Year: 2025

Type: article

Abstract: High Resolution Image Download MS PowerPoint Slide In this work, we realize bilayer molybdenum disulfide (MoS 2 ) transistors with in-plane gates on sapphire substrates. Through sequential transferring of MoS 2, e-beam lithography, and metal lift-off, a device with channel width/length of 500:400 nm is fabricated. With a 250 nm separation between the in-plane gate and MoS 2 channel, a drain current as high as 37 μA with a clear saturation region is observed. The device shows a high ON/OFF current ratio over 10 9, small gate bias required for current modulation, and high responsivity about 230 A/W when operated in the phototransistor mode. The gain of the phototransistor reaches 432. A quick calculation from the transfer curve using the formula of conventional transistors gives a field-effect mobility of 6365.9 cm 2 ·V –1 ·s –1, which, although overestimated, still suggests good performance of the device. With an additional MoS 2 layer to isolate the MoS 2 channel from the influence of the substrate, this dielectric-free in-plane gate transistor has exhibited potential in electronics. The high responsivity of the device under relatively low applied voltages is also promising for weak-light detection.

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.4c18855

Authors: Che-Jia Chang, Shih-Jie Chen, Tzu-Hsuan Chang, Po-Tsung Lee, Shu-Wei Chang, Shih-Yen Lin

Institutions: National Taiwan University, Research Center for Applied Science, Academia Sinica, Academia Sinica, National Yang Ming Chiao Tung University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $4,500

Funders: Academia Sinica, National Science and Technology Council