Improvement of light extraction and carrier injection in far UV-C LEDs on AlN substrate via conductive p-Al0.45Ga0.55N contact layer
Year: 2025
Type: article
Abstract: In this study, we report the application of a p-Al0.45Ga0.55N contact layer in far ultraviolet-C light-emitting diodes (LEDs) on AlN substrates to enhance wall-plug efficiency (WPE). The LEDs achieved an optical power of 9.3 mW and a voltage of 6.4 V at 100 mA current, corresponding to a 1.7-fold improvement in WPE (1.4%) compared to conventional p-GaN-based LEDs. Lifetime tests suggest that this efficiency gain arises from both light extraction and carrier injection. Finally, Hall-effect measurements of bulk Mg-doped Al0.45Ga0.55N demonstrated low resistivity, small activation energy, and inverted carrier type.
Source: Applied Physics Express
Institution: Asahi Kasei (Japan)
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,365
OpenAlex ID: W4408377611