Work

Improved Threshold Voltage Stability and Gate Reliability in p‐GaN Gate High‐Electron‐Mobility Transistors with Hydrogen Plasma Treatment on the Sidewalls

Year: 2025

Type: article

Source: physica status solidi (RRL) - Rapid Research Letters

DOI: 10.1002/pssr.202400367

Authors: Yuxiang Zhang, Zhihua Dong, Guohao Yu, Yingfei Sun, Yu Li, Shaoqian Lu, Huixin Yue, Leifeng Jiang, Zongming Zeng, Yong Cai, Baoshun Zhang

Institutions: Hangzhou Dianzi University, University of Science and Technology of China, Chinese Academy of Sciences, Suzhou Institute of Nano-tech and Nano-bionics

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G1254522351

OpenAlex ID: W4408378835

FWCI: 0.31

Cites: 31

Cited by: 1

Related to: 10