Work

Versatile device structures in MoS2: magnetic switching of perfect spin and valley polarization states as well as tunneling magnetoresistance

Year: 2025

Type: article

Source: Journal of Physics D Applied Physics

DOI: 10.1088/1361-6463/adbcb9

Authors: J G Rojas-Briseño, P Villasana-Mercado, S Molina-Valdovinos, I Rodríguez-Vargas

Institution: Universidad Autónoma de Zacatecas "Francisco García Salinas"

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4408391948

FWCI: 0.827

Cites: 54

Cited by: 4

Related to: 10