Atomic Alignment and Defects at the Interface between Amorphous Insulating Film and Single-Crystal Diamond
Year: 2025
Type: article
Abstract: Diamond is expected to be a material for next-generation power devices, and there is a lot of activity in the areas of crystal growth and device development. The performance of electronic devices is determined by the electronic state at the insulator/semiconductor interface. However, until now there has been no method for analyzing the atomic alignment at this interface with non-destructively, and it has been difficult to directly clarify the origin of defects.
Source: Nihon Kessho Gakkaishi
DOI: 10.5940/jcrsj.67.46
Author: Mami N. FUJII
Institution: Kindai University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W4408395404