Diffusion of Acceptor Metal Impurities from Semi‐Insulating GaN into Undoped GaN Epitaxial Layers
Year: 2025
Type: article
Source: physica status solidi (b)
Authors: Kenji Iso, Satoru Izumisawa
Institutions: Mitsubishi Chemical (Japan), Nagoya University
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4408405069