Molecular Recombination Junction for Vacuum-Deposited Perovskite/Silicon Two-Terminal Tandem Solar Cells
Year: 2025
Type: article
Abstract: The use of commercial, Czochralski-grown silicon wafers as bottom cells in two-terminal perovskite/silicon tandem configurations often leads to defects in the top perovskite absorber due to their rough surfaces, featuring μm-sized pyramids and saw damages. Most recombination junctions in two-terminal tandem cells employ high conductive indium tin oxide which increases the effect of local shunts in the top cell by connecting them. We use Suns– V OC with selective illumination and external quantum efficiency measurements to identify these shunts. Additionally, we show that a molecular recombination junction composed of an n-doped C 60 layer and a p-doped conjugated arylamine layer alleviates the effect of the shunts in the top cell, which we attribute to the lower lateral conductivity of the organic layers. This enables us to prepare two-terminal tandem devices using fully evaporated top cells on Czochralski textured silicon heterojunction cells with V OC s of up to 1.84 V and efficiencies above 22%.
Source: ACS Energy Letters
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $4,500
Funders: Ministerio de Ciencia, Innovación y Universidades, European Commission, Generalitat Valenciana, Ministerio de Ciencia e Innovación, European Climate, Infrastructure and Environment Executive Agency, HORIZON EUROPE Framework Programme, European Regional Development Fund, Agencia Estatal de Investigación, European Social Fund, HORIZON EUROPE Climate, Energy and Mobility
Awards: G1175115578, G121809054, G1387571101, G1463962793, G1521942520, G1553300614, G1622782223, G1730479140, G1855990336, G210041235, NEXt generation of sUstainable perovskite-Silicon tandem cells, G2262748287, G2309174360, G2601397997, G2660406951, G279363373, G2854087512, G2892785307, G300979063, G3356008859, G34346518, G3480869486, G3512444350, NEXt generation of sUstainable perovskite-Silicon tandem cells, G3518538256, G3681454997, G3698567171, G386741233, G4042783231, G410571670, G425668148, G430777504, G4442677895, G451917667, G4526231891, G5080475149, G5195188938, G5421974903, G546199279, G5490587492, G5539308778, G5845768719, G5967599077, G6218905885, G7084143925, G7216050918, G7434936867, G7510693080, G7932140966, G8118709007, G8600888569, G8888022036, G897484643, G929308097, G99296377
OpenAlex ID: W4408504842