Work

Enhancing the Output Power of 308 nm UVB-LED by Strain Modulation Through Mg Incorporation in AlN

Year: 2025

Type: article

Source: IEEE Photonics Technology Letters

DOI: 10.1109/lpt.2025.3552106

Authors: Hongyu Liu, Mingyue Lou, Qiushuang Chen, Hansong Geng, Shengli Qi, Wei Guo, Jichun Ye

Institutions: Chinese Academy of Sciences, Ningbo Institute of Industrial Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G2409923358, G7637866782, G809590017, G8760995830

OpenAlex ID: W4408519571

FWCI: 0.62

Cites: 16

Cited by: 2

Related to: 10