Work

Effect of Low-Dose Irradiation and Subsequent Isochronous Annealing on the Current-Voltage Characteristics of Silicon Carbide-Based Surface-Barrier Diodes

Year: 2024

Type: article

Source: Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques

DOI: 10.1134/s1027451024702239

Authors: A. M. Strel’chuk, V. V. Kozlovski, G. A. Oganesyan

Institutions: Russian Academy of Sciences, Ioffe Institute, St Petersburg University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4408522713

FWCI:

Cites: 19

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Related to: 10