Work

Vacuum Annealing of Cr–SiС(4H) Schottky Diodes

Year: 2024

Type: article

Source: Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques

DOI: 10.1134/s1027451024702240

Authors: A. M. Strel’chuk, E. V. Kalinina

Institutions: Russian Academy of Sciences, Ioffe Institute

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4408522783

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Cites: 13

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Related to: 10