Work

Memory resistor based on GaAs 2D-bilayers

Year: 2025

Type: article

Abstract: Resonant tunneling between closely spaced two dimensional electron gases is a single particle phenomenon that has sparked interest for decades. High tunneling conductances at equal electron densities are observed whenever the Fermi levels of the two quantum wells align. Detuning the Fermi levels out of the resonant 2D–2D tunneling regime causes a negative differential resistance. The negative differential resistance leads to a hysteresis when the device is operated in a current driven mode, allowing a bilayer system to function as a volatile memory resistor.

Source: AIP Advances

DOI: 10.1063/5.0254603

Authors: C. Marty, Z. Lei, S. Silletta, C. Reichl, W. Dietsche, W. Wegscheider

Institutions: ETH Zurich, Laboratory for Solid State Physics

Language: English

Topic: Quantum and electron transport phenomena

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,350

Funders: Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung, National Center of Competence in Research Quantum Science and Technology