Work

Quantum-Well-Embedded InGaN Quantum Dot Vertical-Cavity Surface-Emitting Laser and Its Photoelectric Performance

Year: 2025

Type: article

Abstract: An electrically injected vertical-cavity surface-emitting laser (VCSEL) with quantum-well-embedded InGaN quantum dots (QDs) as the active region was designed. The InGaN QD size and cavity length were optimized using PICS3D simulation software to achieve a high-performance InGaN QD-embedded VCSEL. A comparative analysis between the InGaN QD VCSEL and the traditional InGaN quantum well VCSEL was conducted, and the results demonstrated that the InGaN QD VCSEL achieved higher stimulated recombination radiation and internal quantum efficiency. The threshold current was reduced to 4 mA, corresponding to a threshold current density of 5.1 kA/cm², and the output power reached 4.4 mW at an injection current of 20 mA. A stable single-longitudinal-mode output was also achieved with an output wavelength of 436 nm. The proposed novel quantum-well-embedded QD active-region VCSEL was validated through theoretical simulations, confirming its feasibility. This study provides theoretical guidance and key epitaxial structural parameters for preparing high-performance VCSEL epitaxial materials.

Source: Photonics

DOI: 10.3390/photonics12030276

Authors: Zinan Hua, Hailiang Dong, Zhigang Jia, Wei Jia, Lin Shang, Bingshe Xu

Institutions: Taiyuan University of Technology, Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Shaanxi University of Science and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,896

Funder: National Natural Science Foundation of China