Introduction of charge-trapping Al2O3/Ta2O5/Al2O3 dielectric stack in AlGaN/GaN high electron mobility transistors for programmable threshold voltage
Year: 2025
Type: article
Source: Applied Physics Letters
DOI: 10.1063/5.0243137
Institution: Indian Institute of Technology Bombay
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4408528479