Assessment of the crystalline orientation of nanoscale semiconductor structures via atom probe tomography
Year: 2025
Type: article
Abstract: We demonstrate the application of atom probe tomography for assessing the crystalline orientation of nanoscale semiconductor structures via the analysis of charge state ratio maps in the detector space. The experimental realization is carried out in the context of adventitious cone-shaped domains present in AlGaN quantum dot superlattices. The cone-shaped domains, which emerge from shallow pits generated in AlN and propagate through the superlattices, are shown to exhibit small misorientation angles of their crystalline 〈0001〉 poles. The results of the atom probe tomography analysis are confirmed by convergent beam electron diffraction measurements. The use of this methodology adds another layer to the application of this technique to semiconductor nanoscale systems, providing not only compositional maps but also information on the crystallographic orientation.
Source: Applied Physics Letters
DOI: 10.1063/5.0242659
Institutions: Institut polytechnique de Grenoble, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, Institut de Recherche Interdisciplinaire de Grenoble, Laboratoire d'Électronique des Technologies de l'Information, Université Grenoble Alpes, Centre National de la Recherche Scientifique, Normandie Université, Groupe de Physique des Matériaux, Université de Rouen Normandie
Language: English
Subfield: Biomedical Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
Funder: Agence Nationale de la Recherche
OpenAlex ID: W4408529059