Work

A Novel Method for Real-Time Junction Temperature Monitoring of SiC Mosfet Through Sensitivity Amplification of Turn-Off Delay Time

Year: 2025

Type: article

Source: IEEE Transactions on Power Electronics

DOI: 10.1109/tpel.2025.3546712

Authors: Xiaohui Lu, Laili Wang

Institution: Xi'an Jiaotong University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Science Fund for Distinguished Young Scholars

OpenAlex ID: W4408540268

FWCI: 2.302

Cites: 25

Cited by: 10

Related to: 10