Work

The Effect of Charge Carrier Concentration and Structural Defects on the Raman Spectra of GaAs Single Crystals Grown by the Czochralski Method

Year: 2024

Type: article

Source: Inorganic Materials

DOI: 10.1134/s0020168524701498

Authors: A. D. Maksimov, Yu. I. Tarasov, N. A. Sanzharovskii, K. A. Chusovskaya

Institution: MIREA - Russian Technological University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4408543324

FWCI:

Cites: 15

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Related to: 10