6-in. high-voltage GaN-based E-mode HEMTs with ultrathin barrier structures: Interface quality and its reliability
Year: 2025
Type: article
Source: Applied Physics Letters
DOI: 10.1063/5.0260365
Institutions: Dalian University of Technology, China Resources (China)
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4408544935