Work

Improved device performance in in situ SiNx/AlN/GaN MIS-HEMTs with ex situ Al2O3 passivation at elevated temperatures

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0252966

Authors: Pradip Dalapati, Subramaniam Arulkumaran, Hanlin Xie, Geok Ing Ng

Institutions: Nanyang Technological University, Temasek Laboratories@NTU, Agency for Science, Technology and Research, Institute of Microelectronics

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Agency for Science, Technology and Research

Awards: G2910609997, G2985421571

OpenAlex ID: W4408545151

FWCI: 1.616

Cites: 41

Cited by: 5

Related to: 10