Work

Epitaxial high-K barrier AlBN/GaN HEMTs

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0235294

Authors: Chandrashekhar Savant, Thai-Son Nguyen, Kazuki Nomoto, Saurabh Vishwakarma, Siyuan Ma, Akshey Dhar, Yu-Hsin Chen, Joseph Casamento, David J. Smith, Huili Grace Xing, Debdeep Jena

Institutions: Cornell University, Arizona State University, Massachusetts Institute of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, U.S. Department of Energy, Semiconductor Research Corporation, Army Research Office

Awards: G1189720529, G3039156256, Cornell Center for Materials Research - MRSEC, ULTRA MATERIALS FOR A RESILIENT, SMART ELECTRICITY GRID, NNCI: Cornell NanoScale Science and Technology Facility (CNF)

OpenAlex ID: W4408545645

FWCI: 3.721

Cites: 56

Cited by: 12

Related to: 10