Work

Quantitative characterization of self-heating effects in GaN-on-diamond HEMTs with 3C-SiC interfacial layer

Year: 2025

Type: article

Source: Semiconductor Science and Technology

DOI: 10.1088/1361-6641/adc1fc

Authors: Ryo Kagawa, Chiharu Moriyama, Tatsuru Shirafuji, Jianbo Liang, Naoteru Shigekawa

Institution: Osaka Metropolitan University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4408556445

FWCI: 0.323

Cites: 22

Cited by: 1

Related to: 10