Plasma-enhanced chemical vapor deposition of SiO2 films at 400 kHz and 100 °C using tetraethyl orthosilicate with oxygen and SiH4 with nitrous oxide
Year: 2025
Type: article
Authors: Yutaka Kusuda, Yuki Asai, Takahiro Miyashita, Hiroyuki Nishinaka
Institutions: Kyoto Institute of Technology, Samco Inc. (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4408556500