Work

A novel lateral superjunction Ga 2 O 3 MOSFET with a self-biased accumulation layer for ultra-low specific on-resistance and improved FOM

Year: 2025

Type: article

Source: Semiconductor Science and Technology

DOI: 10.1088/1361-6641/adc1fd

Authors: Moufu Kong, Mingliang Yang, Hongfei Deng, Zeyu Cheng, Zhaoyu Ai, Bo Yi, Hongqiang Yang, Bingke Zhang

Institutions: University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Films and Integrated Devices

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: Sichuan Province Science and Technology Support Program

OpenAlex ID: W4408556580

FWCI: 0.48

Cites: 35

Cited by: 3

Related to: 10