Work

Electrical properties of epitaxial graphene/n-SiC Schottky barrier diodes measured by conductive nanoprobe

Year: 2025

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.35848/1347-4065/adc1d4

Authors: Asato Nabemoto, Yasuhide Ohno, Masao Nagase

Institution: Tokushima University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Japan Society for the Promotion of Science

Award: Realization of high-power terahertz LEDs using epitaxial graphene

OpenAlex ID: W4408556601

FWCI:

Cites: 33

Cited by:

Related to: 10