Cross-sectional investigation by dual bias modulation electrostatic force microscopy on Si/Si junction fabricated by surface-activated bonding
Year: 2025
Type: article
Institutions: The University of Tokyo, Osaka Metropolitan University
Language: English
Topic: 3D IC and TSV technologies
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4408556883
