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Thermally Stable InGaSnO Thin-Film Transistors Using Crystalline Oxide Semiconductor

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3546600

Authors: Taebin Lim, Sunaina Priyadarshi, Solbee Lee, Jiwon Sun, Junyeong Kim, Byeonggwan Kim, Seungmin Woo, Seungho Lee, Jinbaek Bae, Yurim Kim, Jihyun Koh, Taewon Kim, Bongjin Kuh, Jin Jang

Institutions: Kyung Hee University, Samsung (South Korea), Samsung Electronics (South Korea)

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4408565568

FWCI: 1.617

Cites: 49

Cited by: 7

Related to: 10