Work

Design and Analysis of InP/GaN Surrounding Gate TFETs for High-Sensitivity Biosensing Applications

Year: 2025

Type: article

Source: ECS Journal of Solid State Science and Technology

DOI: 10.1149/2162-8777/adc2d2

Authors: Prem Ananth R, Parthasarathy P, Hashim Elshafie, Azath Mubarakali

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4408605306

FWCI: 1.155

Cites: 14

Cited by: 5

Related to: 10