Integrable selective-area inverse n-doping of WSe2 by ultrathin CaF2 dielectrics for CMOS
Year: 2025
Type: article
Source: 2D Materials
Authors: Yuan Gao, Fei Zhou, Qi Wu, Weisheng Li, Tong Tong, Yi Shi, Taotao Li
Institutions: Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University, Southwest University of Science and Technology, State Key Laboratory of Environmental-friendly Energy Materials, Suzhou University of Science and Technology
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
Awards: G4718440019, G6846255251
OpenAlex ID: W4408605688