High operating temperature (> 200 °C) InAs/GaAs quantum-dot laser with co-doping technique
Year: 2025
Type: article
Abstract: Working reliably at elevated operating temperatures is a key requirement for semiconductor lasers used in optical communication. InAs/GaAs quantum-dot (QD) lasers have been considered a promising solution due to the discrete energy states of QDs. This work demonstrates temperature-insensitive and low threshold InAs/GaAs QD lasers incorporating co-doping technique, compared with p-type modulation doping. 2 mm long co-doped QD lasers exhibit a low threshold current density of 154 A cm−2 (210 A cm−2) and operate at a high heatsink temperature of 205 °C (160 °C) under the pulsed (continuous-wave) mode, outperforming the p-type doped QD lasers. The results reveal that co-doping effectively enhances both high-temperature stability and threshold reduction in InAs/GaAs QD lasers, surpassing the performance of conventional p-type modulation doping. This approach offers a pathway toward cooling-free operation, making co-doped QD lasers suitable for data and telecommunication applications.
Institutions: University College London, Cardiff University
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $3,325
OpenAlex ID: W4408605833