Work

Defect Engineering in β-Ga2O3/4H-SiC Heterojunctions via Kr Ion Irradiation for Enhanced Solar-Blind Photodetector Performance

Year: 2025

Type: article

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.5c01421

Authors: Yongtao Yang, Yang Zhang, Xiaotong Ma, Yao Li, Fan Zhang, Huiping Zhu, Danfeng Li, Zhenping Wu

Institutions: Beijing University of Posts and Telecommunications, State Key Laboratory of Information Photonics and Optical Communications, Chinese Academy of Sciences, Institute of Microelectronics, City University of Hong Kong

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funders: National Natural Science Foundation of China, Beijing University of Posts and Telecommunications, Research Grants Council, University Grants Committee, State Key Laboratory of Information Photonics and Optical Communications

Awards: G2303040326, G2911396613, G3386072217, G6626214918, G7647448694, G8924576164

OpenAlex ID: W4408647483

FWCI: 3.027

Cites: 48

Cited by: 19

Related to: 10