Work

Admittance Measurements of Au/SnO2/p-InP (MOS) Device

Year: 2025

Type: article

Source: ECS Journal of Solid State Science and Technology

DOI: 10.1149/2162-8777/adc3c7

Authors: Önder Güngör, Raziye Ertuğrul Uyar, Adem Tataroğlu

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4408701674

FWCI: 0.907

Cites: 39

Cited by: 4

Related to: 10