Work

Simulation of Electrical and Thermal Properties of 4H-SiC Based on Molecular Dynamics

Year: 2024

Type: conference-paper

Source: International Conference on Sensing, Measurement & Data Analytics in the era of Artificial Intelligence (ICSMD)

DOI: 10.1109/icsmd64214.2024.10920288

Authors: Chi Chen, YuXin Guan, Chuang Wang, ChengWen Song, GuoShuai Chen

Institution: Xi'an University of Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4408712319

FWCI:

Cites: 10

Cited by:

Related to: 10