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High-Performance ZrO₂/β-Ga₂O₃ (001) Metal–Insulator–Semiconductor Capacitors

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3549382

Authors: Qihao Zhang, Jiangwei Liu, Dongyuan Zhai, Min He, Jiwu Lu

Institutions: Hunan University, National Institute for Materials Science

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: Natural Science Foundation of Hunan Province

Award: G639061702

OpenAlex ID: W4408727606

FWCI:

Cites: 43

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Related to: 10