Controlling the Crystallization Kinetics of Low Loss Phase Change Material Sb2S3
Year: 2025
Type: article
Abstract: Optoelectronics are crucial for developing energy‐efficient chip technology, with phase‐change materials (PCMs) emerging as promising candidates for reconfigurable components in photonic integrated circuits, such as nonvolatile phase shifters. Antimony sulfide (Sb2S3) stands out due to its low optical loss and considerable phase‐shifting properties, along with the non‐volatility of both phases. This study demonstrates that the crystallization kinetics of Sb2S3 can be switched from growth‐driven to nucleation‐driven by altering the sample dimension from bulk to film. This tuning of the crystallization process is critical for optical switching applications requiring control over partial crystallization. Calorimetric measurements with heating rates spanning over six orders of magnitude, reveal that, unlike conventional PCMs that crystallize below the glass transition, Sb2S3 exhibits a measurable glass transition prior to crystallization from the undercooled liquid (UCL) phase. The investigation of isothermal crystallization kinetics provides insights into nucleation rates and crystal growth velocities while confirming the shift to nucleation‐driven behavior at reduced film thicknesses—an essential aspect for effective device engineering. A fundamental difference in chemical bonding mechanisms was identified between Sb2S3, which exhibits covalent bonding in both material phases, and other PCMs, such as GeTe and Ge2Sb2Te5, which demonstrate pronounced bonding alterations upon crystallization.
Source: Advanced Physics Research
Institutions: RWTH Aachen University, University of Arizona
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,690
OpenAlex ID: W4408743573