Recessed p-GaN Gate MIS-HEMT with AlN Interlayer and Buried p-GaN Layer
Year: 2025
Type: article
Source: Semiconductors
Authors: P. S. Sreelekshmi, Jobymol Jacob
Institution: APJ Abdul Kalam Technological University
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4408749150