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Carbon‐Related Trap Dynamics in Semi‐Insulating Buffer Layer of GaN‐on‐Si Substrate

Year: 2025

Type: article

Source: physica status solidi (a)

DOI: 10.1002/pssa.202401019

Authors: Ryoma Kaneko, Jumpei Tajima, Akira Yoshioka, Toshiki Hikosaka, Shinya Nunoue

Institutions: Toshiba (Japan), Toshiba Electronic Devices & Storage Corporation (Japan)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4408761920

FWCI: 0.323

Cites: 34

Cited by: 1

Related to: 10