Work

Quasi‐Vertical Diamond Schottky Barrier Diode With Sidewall‐Enhanced n‐ Ga2O3 /p‐Diamond Junction Termination Extension

Year: 2025

Type: article

Source: International Journal of Numerical Modelling Electronic Networks Devices and Fields

DOI: 10.1002/jnm.70038

Authors: Chengwei Dong, Wang Lin, Tong Zhang, Xianyi Lv, Qiliang Wang, Liuan Li, Guangtian Zou

Institutions: Jilin University, State Key Laboratory of High Pressure and Superhard Materials, Zaozhuang University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: Natural Science Foundation of Jilin Province

OpenAlex ID: W4408766155

FWCI: 0.163

Cites: 19

Cited by: 1

Related to: 10