Work

Performance improvement of GaN-based laser diode by TMAH solution treatment on an m-plane-facet sidewall ridge structure

Year: 2025

Type: article

Source: Optics Letters

DOI: 10.1364/ol.558161

Authors: Mengyang Huang, Peng Zhang, Haowen Hua, Ying Gu, Yi Gong, Wenxian Yang, Jianjun Zhu, Shibing Long, Shulong Lu

Institutions: University of Science and Technology of China, Chinese Academy of Sciences

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Jiangsu Province, National Key Research and Development Program of China

Awards: G52446831, G6283364914, G7239127759

OpenAlex ID: W4408771312

FWCI: 1.551

Cites: 20

Cited by: 5

Related to: 10