Work

Realizing GaN-based blue laser diode with 7.5 W output power via electron blocking layer thickness adjustment

Year: 2025

Type: article

Source: Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

DOI: 10.1116/6.0004426

Authors: Zhenyu Chen, Feng Liang, Degang Zhao, Zongshun Liu, Jing Yang, Ping Chen

Institutions: Chinese Academy of Sciences, State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, University of Chinese Academy of Sciences

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, National Natural Science Foundation of China, Youth Innovation Promotion Association of the Chinese Academy of Sciences, National Key Research and Development Program of China

Awards: G1316183371, G2340495322, G2448729015, G3036932515, G4487040938, G6030225121, G6778801559, G7575456791, G8002630593, G8076140018, G818527181

OpenAlex ID: W4408773276

FWCI: 1.292

Cites: 19

Cited by: 4

Related to: 10