Work

Effect of Resistive State Switching in Led Structures Based on InGaN/GaN

Year: 2024

Type: article

Source: Nanobiotechnology Reports

DOI: 10.1134/s2635167624602894

Authors: L. N. Vostretsova, V. A. Ribenek, D. I. Vostretsov

Institution: Ulyanovsk State University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4408777608

FWCI:

Cites: 28

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Related to: 10