Year: 2025
Type: article
Abstract: ： Wide bandgap semiconductors have great potential for the development of compact solar-blind ultraviolet detectors without filters.This article summarizes the research progress of deep ultraviolet photodetectors using wide bandgap oxide semiconductors including MgZnO and amorphous Ga 2 O 3 (a-Ga 2 O 3 ) thin films.It has been found that the photoresponse performance of a-Ga 2 O 3 thin film is comparable or even better than that of crystalline thin films.Numerous results demonstrate that oxygen vacancy (V O ) defects play a crucial role in device performance.Based on the effective modulation of V O defects， high performance solar-blind ultraviolet photodetectors can be successfully achieved.In addition， the persistent photoconductivity effect， which is usually accompanied by the presence of V O defects in oxide materials， provides a new perspective for the development of optoelectronic synaptic devices in deep ultraviolet range.Finally， a brief discussion is provided concerning the above research progress as well as some unsolved issues.These advancements are expected to promote the industrial application of wide bandgap oxide semiconductor materials， especially a-Ga 2 O 3 ， in deep ultraviolet detection in the future.
Source: Chinese Journal of Luminescence
Authors: LIANG Huili, ZHU Rui, DU Xiaolong, MEI Zengxia
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W4408787164