Work

O-doped GeTe/Sb2Te3 multilayer chalcogenide for multi-level phase-change device

Year: 2025

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.35848/1347-4065/adc465

Authors: Mutsumi Miuchi, Kazuki Matsuda, Shota Yoshimoto, Eiji Sawai, You Yin

Institution: Gunma University

Language: English

Topic: Phase-change materials and chalcogenides

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: Japan Society for the Promotion of Science

Award: Artificial neuron with all functions using only one functional material

OpenAlex ID: W4408788765

FWCI: 0.208

Cites: 28

Cited by: 1

Related to: 10