Work

Ligand-driven facet control of InAs-based quantum dots for enhanced near- and shortwave infrared emission

Year: 2025
Type: article
Abstract: InAs-based quantum dots (QDs) are promising heavy-metal-free semiconductors for infrared emission technologies, offering tunable bandgaps via quantum confinement and excellent charge-carrier transport properties.
Language: English
Open Access status: hybrid
OpenAlex ID: W4408828158
FWCI: 1.476
Cites: 54
Cited by: 7
Related to: 10