Ligand-driven facet control of InAs-based quantum dots for enhanced near- and shortwave infrared emission
Year: 2025
Type: article
Abstract: InAs-based quantum dots (QDs) are promising heavy-metal-free semiconductors for infrared emission technologies, offering tunable bandgaps via quantum confinement and excellent charge-carrier transport properties.
Source: Inorganic Chemistry Frontiers
DOI: 10.1039/d5qi00142k
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W4408828158
