Outside Front Cover: Low Temperature Atomic Layer Deposition of (00l)‐Oriented Elemental Bismuth (Angew. Chem. Int. Ed. 15/2025)
Year: 2025
Type: article
Abstract: The first successful growth of elemental bismuth (Bi) thin films via thermal atomic layer deposition (ALD) using Bi(NMe2)3 and Sb(SiMe3)3 is reported by Kornelius Nielsch, Amin Bahrami et al. in their Research Article (e202422578) As depicted on the cover picture, the films evolve from island formation to full coverage, accompanied by a preferential growth shift from the (012) to the (003) plane. The resulting films exhibit semimetallic behavior with a resistivity of approximately 200 µΩ·cm. Artwork by the team of INMYWORK Studio.
Authors: Jorge Luis Vazquez Arce, Alessio Amoroso, Nicolas Perez, Jaroslav Charvot, Dominik Naglav Hansen, Panpan Zhao, Jun Yang, Sebastian Lehmann, Angelika Wrzesińska Lashkova, Fabian Pieck, Ralf Tonner Zech, Filip Bureš, Annalisa Acquesta, Yana Vaynzof, Anjana Devi, Kornelius Nielsch, Amin Bahrami
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W4408829499