Work

Two-dimensional GaN/Si heterojunctions towards high-performance UV-B photodetectors

Year: 2025

Type: article

Source: Materials Horizons

DOI: 10.1039/d4mh01899k

Authors: Hongsheng Jiang, Haiyan Wang, Wenliang Wang, Guoqiang Li

Institutions: State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangdong Academy of Sciences

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Guangdong Province

Awards: G5684661601, G6952461238

OpenAlex ID: W4408844465

FWCI: 4.671

Cites: 48

Cited by: 15

Related to: 10