Work

Interfacial Reaction Engineering for Use in Hf0.5Zr0.5O2-Based Metal-Ferroelectric-Metal Capacitors Using N2 + H2 Gas Pretreatment

Year: 2025

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.5c00045

Authors: Seung Yeon Kim, Dong Hee Han, Jaehyeon Yun, Woojin Jeon

Institution: Kyung Hee University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funders: Gyeonggi-do Regional Research Center, Korea Evaluation Institute of Industrial Technology

Awards: G3264627198, G3683957246, G4386726385, G5093550132

OpenAlex ID: W4408848705

FWCI: 0.462

Cites: 55

Cited by: 2

Related to: 10