Work

Resistivity mapping of SiC wafers by quantified Raman spectroscopy

Year: 2025

Type: article

Abstract: axis of the resistivity. The analysis procedure was automated by creating suitable R-language codes that extract the necessary information on the individual aspects of the analysis and create the images described above from a single dataset.

Source: Physical Chemistry Chemical Physics

DOI: 10.1039/d4cp04545a

Authors: Elisa Calà, Simone Cerruti, Cristina Sanna, Marco Maffè, Wen Chin Hsu, Man Hsuan Lin, Luciano Ramello, Giorgio Gatti

Institutions: Università degli Studi del Piemonte Orientale “Amedeo Avogadro”, SunEdison (Italy)

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Funder: Hsinchu Science Park Bureau, Ministry of Science and Technology, Taiwan

OpenAlex ID: W4408849296

FWCI: 1.138

Cites: 24

Cited by: 5

Related to: 10