Work

Growth and structural evaluation of GaAsN/GaAs superlattice films with different N distributions grown by atomic layer epitaxy

Year: 2025

Type: article

Abstract: In this study, to control the N distribution in GaAsN films, GaAsN/GaAs superlattice (SL)-structure films were grown by repeating one cycle of the GaAsN atomic layer growth sequence and n (0–9) cycles of the GaAs growth sequence using atomic layer epitaxy. The effects of n on the incorporation of N atoms into the GaAsN layer and the detailed N distribution in the film were investigated by considering the lattice constants of the GaAsN/GaAs SL and SL periods, as evaluated by X-ray diffraction. The formation of the SL structures was confirmed, although the SL periods deviated slightly from the designed values. The SL periods were not singular for the films and the direction of the SL period was slightly tilted (∼0.2°) from the growth direction. This indicates the existence of at least two regions with different tilt directions and periods in the film.

Source: Japanese Journal of Applied Physics

DOI: 10.35848/1347-4065/adc586

Authors: Hayato Koto, Masahiro Kawano, Hidetoshi Suzuki

Institution: University of Miyazaki

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $2,210

Funder: Japan Society for the Promotion of Science