Work

Π-shape Gate Structure Design for MOS Combined with p-GaN AlGaN/GaN HEMTs

Year: 2024

Type: conference-paper

Source: International Conference on Electronic Information Engineering and Computer Communication (EIECC)

DOI: 10.1109/eiecc64539.2024.10929189

Authors: Haiqiu Guo, Yue Liu, Yuan Li, Hui Shen, Yanli Liu

Institutions: Qilu University of Technology, Qilu Institute of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4408857181

FWCI:

Cites: 10

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Related to: 10