Work

Enhancing ON Current and Electron Mobility in GaN-Based HEMTs: Integration of Advanced Materials and TCAD Simulation Approaches

Year: 2024

Type: conference-paper

Source: International Conference on Communication, Control and Intelligent Systems (CCIS)

DOI: 10.1109/ccis63231.2024.10931932

Authors: A. Deva Lenin, E. N. Praveenkanth, T. Kanthimathinathan, T. S. Arun Samuel, I. Vivek Anand

Institution: National Engineering College

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4408861629

FWCI:

Cites: 11

Cited by:

Related to: 10