Work

Comparative Analysis of T-gate GaN HEMT with different passivation layers for RF Applications

Year: 2024

Type: conference-paper

Source: International Conference on Communication, Control and Intelligent Systems (CCIS)

DOI: 10.1109/ccis63231.2024.10931940

Authors: Arzoo Shakya, Praveen Pal, Sneha Kabra

Institutions: University of Delhi, Indian Institute of Technology Kanpur

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Science and Engineering Research Board

OpenAlex ID: W4408862211

FWCI: 1.208

Cites: 18

Cited by: 1

Related to: 10